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Journals / Düzce Üniversitesi Bilim ve Teknoloji Dergisi / 2020 / Cilt: 8 - Sayı: 1

Conductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodes

Mn Katkılı CdO Fotodiyotların İletkenlik ve Arayüz Durum Yoğunluğu Karakteristikleri

Mümin Mehmet KOÇ
Pages
925–939
Publication Date
2022-10-12
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Density of state values were found to increase with increased Mn doping.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Sol-gel technique was used to fabricate CdO and Mn doped CdO solutions which were used to produce thin films.
📊
Key Findings & Data:Undoped and 0.2% Mn doped, 6% Mn doped, and 10% Mn doped solutions were spin coated on Si wafers to fabricate photodiodes.
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Conclusion & Impact:Density of state values were found to increase with increased Mn doping.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:CdO İnce Filmler · Mn Katkılama · Fotodiyotlar

Abstract

Sol-gel technique was used to fabricate CdO and Mn doped CdO solutions which were used to produce thin films. Undoped and 0.2% Mn doped, 6% Mn doped, and 10% Mn doped solutions were spin coated on Si wafers to fabricate photodiodes. Conductance – voltage (G - V) measurements were performed. Mn doping enhances the conductance properties of the CdO diodes. Increased conductance characteristics were obtained with increasing AC signal frequency. Corrective conductance – voltage (Gadj – V) graphs were obtained using conductance voltage graphs. Increased corrective conductance (Gadj) values were obtained with increasing AC signal frequency. Using corrective conductance – voltage (Gadj – V) and conductance – voltage (G - V) data density of interface states (Dit) values of the diodes were calculated. Different density of state values were obtained for the different photodiode. Density of state values were found to increase with increased Mn doping.

Özet

İnce film üretiminde kullanılan CdO ve Mn katkılı CdO çözeltiler Sol-gel yöntemi kullanılarak üretildi. Katkısız, %0.2 Mn katkılı, %6 Mn katkılı ve %10 Mn katkılı CdO çözeltileri spin kaplama yöntemi kullanılarak silisyum tabakalar üzerine fotofiyot üretim amacı ile kaplandı. İletkenlik – voltaj (G - V) ölçümleri gerçekleştirildi. Mn katkılamanın CdO fotodiyotların iletkenlik özelliklerini iyileştirdiği görüldü. Artan AC sinyal frekansı ile iletkenlik karakteristiğinin de artış gösterdiği tespit edildi. Düzeltilmiş iletkenlik – voltaj (Gadj – V) grafikleri, iletkenlik – voltaj grafikleri kullanılarak elde edildi. Artan AC sinyal frekansı ile düzeltilmiş iletkenlik değerinin de artış gösterdiği anlaşıldı. Düzeltilmiş iletkenlik – voltaj ve iletkenlik – voltaj grafikleri kullanılarak arayüz durum yoğunluğu değerleri elde edildi. Üretilen farklı fotodiyotlar için farklı arayüz durum yoğunluğu değerleri var olduğu anlaşıldı. Arayüz durum yoğunluğu değerlerinin Mn katkılaması ile arttığı keşfedildi.

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Cite This Article

KOÇ, M. M. (2022). Conductance and Density of Interface State Characteristics of Mn Doped CdO Photodiodes. Düzce Üniversitesi Bilim ve Teknoloji Dergisi, Cilt: 8 - Sayı: 1, 925–939. https://ajindex.com/articles/494066

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