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Journals / Dumlupınar Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2019 / Cilt: 0 - Sayı: 43

THE STRUCTURAL, SURFACE MORPHOLOGY, OPTICAL AND ELECTRICAL PROPERTIES OF ZnO FILM DOPED GALLIUM AT 10%

%10 GALYUM KATKILI ZnO FİLMİNİN YAPISAL, YÜZEY MORFOLOJİSİ, OPTİK ve ELEKTRİK ÖZELLİKLERİ

Senem AYDOĞU
Seda UZKALAN
Pages
108–124
Publication Date
2022-10-11
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

All experimental results show that the grain size, surface roughness, energy band gap andelectrical conductivity increased as its Urbach energy decreased with the addition of gallium.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The pure and 10% gallium (Ga) doped zinc oxide (ZnO) films synthesized on glass substrates byultrasonic spray pyrolysis technique.
📊
Key Findings & Data:It observed from the results of XRD that the preferred orientation changed from (100) to(002) with Ga doping at 10 %.
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Conclusion & Impact:All experimental results show that the grain size, surface roughness, energy band gap andelectrical conductivity increased as its Urbach energy decreased with the addition of gallium.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The pure and 10% gallium (Ga) doped zinc oxide (ZnO) films synthesized on glass substrates byultrasonic spray pyrolysis technique. The structural, surface morphology, optical and electricalproperties of pure and doped films were analysed by X–ray diffraction (XRD) pattern, atomic forcemicroscopy (AFM), Ultraviolet – Visible (UV–Vis) spectrophotometer and four probe technique,respectively. It observed from the results of XRD that the preferred orientation changed from (100) to(002) with Ga doping at 10 %. Also, the grain size and strain values of films calculated both ScherrerMethod and Williamson–Hall (W–H) Method were compared. In the result of this comparison, thevalues calculated by Scherrer Method were found to be smaller than the values calculated by W–HMethod. All experimental results show that the grain size, surface roughness, energy band gap andelectrical conductivity increased as its Urbach energy decreased with the addition of gallium. As aresult, the crystallinity of ZnO film was observed to improve with doping Ga at 10 %.

Özet

Saf ve %10 galyum (Ga) katkılı çinko oksit (ZnO) filmlerinin ultrasonik sprey piroliz tekniğiyle cam tabanlar üzerine sentezlendi. Saf ve katkılı filmlerin yapısal, yüzey morfolojisi, optik ve elektriksel özellikleri X–ışını kırınım (XRD) örneği, atomik kuvvet mikroskopisi (AFM), ultraviyole ve görünür ışık (UV–Vis) spektrofotometresi ve dört prob tekniği ile analizlendi; sırasıyla. XRD sonuçlarından %10 Ga katkılanmasıyla tercihli yönelimin (100) dan (002) ye değiştiği gözlendi. Ayrıca, hem Scherrer Metodu hem de Williamson–Hall (W–H) Metodu ile hesaplanan filmlerin tanecik boyutu ve gerilim değerleri karşılaştırıldı. Bu karşılaştırmanın sonucunda, Scherrer Metoduyla hesaplanan değerler W–H Metodu ile hesaplanan değerlerden daha küçük bulundu. Tüm deneysel sonuçları, galyum katkısıyla Urbach enerjisi azalırken, tanecik boyutunun, yüzey pürüzlülüğünün, enerji band aralığının ve elektrik iletkenliğinin arttığını göstermiştir. Sonuç olarak, ZnO filminin kristalliği %10 Ga katkısıyla geliştiği gözlenmiştir.

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Cite This Article

AYDOĞU, S., UZKALAN, S. (2022). THE STRUCTURAL, SURFACE MORPHOLOGY, OPTICAL AND ELECTRICAL PROPERTIES OF ZnO FILM DOPED GALLIUM AT 10%. Dumlupınar Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 0 - Sayı: 43, 108–124. https://ajindex.com/articles/492300

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