Journals / Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2019 / Cilt: 23 - Sayı: 1

The Effects of Different Ga Doping on Structural, Optical and Electrical Properties of CdO Films

CdO Filmlerinin Yapısal, Optiksel ve Elektriksel Özellikleri Üzerine Farklı Ga Katkılamasının Etkileri

Pages
140–147
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The best conductivity was obtained with 4% and 8% Ga doping of CdO films.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:CdO and CdO:Ga films were produced using the ultrasonic spray pyrolysis method.
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Key Findings & Data:The XRD patterns show that all the films deposited at 275 ± 5 °C are in face center cubic polycrystalline structure.
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Conclusion & Impact:The best conductivity was obtained with 4% and 8% Ga doping of CdO films.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Kadmiyum oksit · Galyum katkılama · Ultrasonik sprey piroliz

Abstract

CdO and CdO:Ga films were produced using the ultrasonic spray pyrolysis method. The structural, optical and electrical properties of produced films were defined by x-ray diffraction pattern (XRD), UV–VIS spectrophotometer and electrical measurements, respectively. The XRD patterns show that all the films deposited at 275 ± 5 °C are in face center cubic polycrystalline structure. The optic band gaps of Ga doped films were obtained with the optical method and observed to change from 2.50 to 2.66 eV with the increase of Ga doping. Additionally, the resistivity, conductivity and I–V characteristics of the samples are investigated with four point and two point probe methods. It is clearly seen that the electrical properties of CdO have improved with the appropriate Ga doping. The best conductivity was obtained with 4% and 8% Ga doping of CdO films.

Özet

CdO ve CdO:Ga filmleri ultrasonik sprey piroliz metodu kullanılarak üretilmiştir. Üretilen filmlerin yapısal, optiksel ve elektriksel özellikleri sırasıyla, x ışını kırınım deseni (XRD), UV-VIS spektrofotometresi ve elektriksel ölçümleri ile tanımlanmıştır. XRD desenleri 275 ± 5 °C sıcaklığında biriktirilen bütün filmlerin yüzey merkezli kübik polikristal yapıya sahip olduğunu göstermektedir. Ga katkılı filmlerin optik band aralıkları optik metod ile elde edildi ve Ga katkısının artması ile 2.50 eV’den 2.66 eV’a değiştiği gözlenmiştir. Bunlara ek olarak, örneklerin özdirençleri, iletkenlikleri ve I – V karakteristikleri dört nokta prob ve iki nokta prob metodları ile incelendi. Ga’un uygun katkısı ile CdO’nun elektriksel özelliklerini geliştirdiği açıkça görülmüştür. En iyi iletkenliğin CdO filmlerinin %4 ve %8 Ga katkısıyla elde edildi.

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Cite This Article

AYDOĞU, S., ÇABUK, G., ÇOBAN, M. B. (2019). The Effects of Different Ga Doping on Structural, Optical and Electrical Properties of CdO Films. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 23 - Sayı: 1, 140–147. https://ajindex.com/articles/310781

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