Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases.
📌 3 Key Takeaways
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Objective & Hypothesis:Interface structures of W films on Si(100) substrates grown by LPCVD from a mixture of $WF_6$, $H_2$ and $SiH_4$ (silane) gases at 280 °C have been studied by transmission electron microscopy.
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Key Findings & Data:Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to $WF_6$ .
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Conclusion & Impact:Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Özet
Interface structures of W films on Si(100) substrates grown by LPCVD from a mixture of $WF_6$, $H_2$ and $SiH_4$ (silane) gases at 280 °C have been studied by transmission electron microscopy. Cross-sectional and plan-view samples were prepared to characterize the films. Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to $WF_6$ . The W films have exhibited many randomly oriented grains ranging between 1000 and 4500 A in size. Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases.
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Cite This Article
ATICI, Y., YAKINCI, M. E., ULUĞ, B., AYDOĞDU, Y. (1996). Interface structures and electrical properties of W/Si films grown by LPCVD. Turkish Journal of Physics, Cilt: 20 - Sayı: 7, 753–759. https://ajindex.com/articles/378988