Journals / Turkish Journal of Physics / 2001 / Cilt: 25 - Sayı: 3

Vacuum Cryostat's Pressure Dependent Dark Conductivity Measurements on a-Si:H and a-SiN:H Films

Pages
265–269
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

We have also studied the effect of nitrogen on these observed peaks in dark conductivity.

📌 3 Key Takeaways

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Objective & Hypothesis:The electrical properties of a-Si:( H ) and a- SiN ):( H ) films prepared by plasma deposition from SiH4+NH3 gas mixtures have been investigated.
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Key Findings & Data:We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a-Si:H and a-SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate.
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Conclusion & Impact:We have also studied the effect of nitrogen on these observed peaks in dark conductivity.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:A. Dark conductivity · B. Cryostat pressure · C.Surface effect

Abstract

The electrical properties of a-Si:( H ) and a- SiN ):( H ) films prepared by plasma deposition from SiH4+NH3 gas mixtures have been investigated. We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a-Si:H and a-SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate. To study the surface adsorption effect, vacuum cryostat pressure dependence of these peaks are investigated. We have also studied the effect of nitrogen on these observed peaks in dark conductivity.

Özet

The electrical properties of a-Si:( H ) and a- SiN ):( H ) films prepared by plasma deposition from SiH4+NH3 gas mixtures have been investigated. We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a-Si:H and a-SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate. To study the surface adsorption effect, vacuum cryostat pressure dependence of these peaks are investigated. We have also studied the effect of nitrogen on these observed peaks in dark conductivity.

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Cite This Article

AY, İ., TOLUNAY, H. (2001). Vacuum Cryostat's Pressure Dependent Dark Conductivity Measurements on a-Si:H and a-SiN:H Films. Turkish Journal of Physics, Cilt: 25 - Sayı: 3, 265–269. https://ajindex.com/articles/378650

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