Journals / El-Cezeri / 2019 / Cilt: 6 - Sayı: 1

Investigation of the Effect of RF-DC Power Conversion Efficiency Single/Double Layered Dickson Rectifier Circuit Using HSMS285c Diode in 545 MHz to 5800 MHz GSM and ISM Bands

545 MHz ile 5800 MHz Arası GSM ve ISM Bantlarda, HSMS 285c Diyodu Kullanılarak Yapılan Dickson Doğrultucu Devresinde Tek/Çift Katmanlı Yapının, RF-DC Güç Dönüştürme Verimine Etkisinin İncelenmesi

Journal
El-Cezeri
Pages
24–30
Publication Date
2019-01-31
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In the single layer rectifier, 36% efficiency was observed at 545MHz and 32% efficiency at the double layer.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, a Dickson Voltage Multiplier circuit is designed that is used RF energy harvesting technologies as rectifier topology.
📊
Key Findings & Data:HSMS-285C diode is used in the rectifier layer.
💡
Conclusion & Impact:In the single layer rectifier, 36% efficiency was observed at 545MHz and 32% efficiency at the double layer.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Radyo Frekansı ile Enerji Hasatlama · Doğrultucu Topolojileri · Güç Dönüştürme Verimi

Abstract

In this study, a Dickson Voltage Multiplier circuit is designed that is used RF energy harvesting technologies as rectifier topology. The efficiency analysis of these designs at different frequency and load values has been investigated. Advanced Design System (ADS) is used for design and simulation of single and double layer rectifier circuit. This layout was made using microstrip line. HSMS-285C diode is used in the rectifier layer. Rectifier efficiency, output voltage and load value that drive the circuit was investigated in single- and double-layer Dickson voltage multiplier when input power adjusted between -10dBm to 20dBm. In the single layer rectifier, 36% efficiency was observed at 545MHz and 32% efficiency at the double layer.

Özet

Bu çalışmada RF enerji hasatlama teknolojilerinde kullanılan doğrultucu topolojilerinden Dickson gerilim çoklayıcı devresi tasarlanmıştır. Bu tasarımların farklı frekans ve yük değerlerinde verim analizi incelenmiştir. Tek katmanlı ve çift katmanlı doğrultucu devresinin tasarımı ve simülasyonları için Advanced Design System (ADS) kullanılmıştır. Tasarım mikroşerit hatlar kullanılarak yapılmıştır. Doğrultucu katmanında HSMS-285C Schottky diyodu kullanılmıştır. Tek ve iki katmanlı Dickson gerilim çoklayıcı ile giriş gücü -10 dBm ile 20 dBm arasında ayarlanarak beş farklı frekans (545MHz, 900MHz, 1800MHz, 2.45GHz ve 5.8GHz) değerinde doğrultucu verimi, çıkış gerilimleri ve devrenin sürüldüğü yük değerleri incelenmiştir. Tek katmanlı doğrultucuda, 545MHz’de %36, iki katmanlı devrede ise %32 verim gözlenmiştir.

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Cite This Article

GÖZEL, M., KASAR, Ö., KAHRİMAN, M. (2019). Investigation of the Effect of RF-DC Power Conversion Efficiency Single/Double Layered Dickson Rectifier Circuit Using HSMS285c Diode in 545 MHz to 5800 MHz GSM and ISM Bands. El-Cezeri, Cilt: 6 - Sayı: 1, 24–30. https://ajindex.com/articles/252408

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