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Journals / Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi / 2025 / Cilt: 6 Sayı: 3

Electrochemical Growth and Characterization of Cu₂ZnSnS₄ (CZTS) Thin Film

Cu₂ZnSnS₄ (CZTS) İnce Filminin Elektrokimyasal Olarak Büyütülmesi ve Karakterizasyonu

Seniye Yüksel(GİRESUN ÜNİVERSİTESİ)0000-0002-7382-9456
Mustafa Serkan Soylu(GİRESUN ÜNİVERSİTESİ)0000-0002-8440-1260
Cevdet Coşkun(GİRESUN ÜNİVERSİTESİ)0000-0002-2186-8699
Pages
878–885
Publication Date
2025-12-31
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Surface morphology studies revealed the formation of a continuous film that spread homogeneously over the entire surface, albeit with heterogeneous microstructures in certain areas.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, the structural and morphological characteristics of kesterite-structured Cu₂ZnSnS₄ (CZTS) thin film grown on indium tin oxide (ITO) glass substrate by electrochemical deposition method in potentiostatic mode at room temperature were investigated.
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Key Findings & Data:In the synthesis of this CZTS film, tri-sodium citrate and tartaric acid were used as complexing agents in the precursor solution.
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Conclusion & Impact:Surface morphology studies revealed the formation of a continuous film that spread homogeneously over the entire surface, albeit with heterogeneous microstructures in certain areas.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:CZTS · XRD · AFM

Abstract

In this study, the structural and morphological characteristics of kesterite-structured Cu₂ZnSnS₄ (CZTS) thin film grown on indium tin oxide (ITO) glass substrate by electrochemical deposition method in potentiostatic mode at room temperature were investigated. In the synthesis of this CZTS film, tri-sodium citrate and tartaric acid were used as complexing agents in the precursor solution. The deposited CZTS thin film was annealed at 550 °C for 30 min in a nitrogen atmosphere in the presence of sulfur powder. The structural and morphological properties of the obtained CZTS thin film were investigated by using X-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) and Atomic force microscopy (AFM) methods, respectively. X-ray diffraction (XRD) analysis confirmed that the obtained CZTS thin film had the crystal structure corresponding to the kesterite phase with characteristic reflections of (112), (200), (211), (220) and (312). Raman spectroscopy revealed the emergence of a prominent peak at approximately 331 cm⁻¹, specific to the CZTS phase. Surface morphology studies revealed the formation of a continuous film that spread homogeneously over the entire surface, albeit with heterogeneous microstructures in certain areas.

Özet

Bu çalışmada, oda sıcaklığında potansiyostatik modda elektrokimyasal çöktürme yöntemiyle indiyum kalay oksit (İTO) cam atlık üzerine büyütülen kesterit yapılı Cu₂ZnSnS₄ (CZTS) ince filminin yapısal ve morfolojik karakteristikleri incelenmiştir. Bu CZTS filmin sentezinde, öncül çözelti içinde kompleksleyici ajan olarak tri-sodyum sitrat ve tartarik asit kullanılmıştır. Çöktürülen CZTS ince film, sülfür tozu varlığında azot atmosferinde 550 °C’de 30 dakika süreyle tavlanmıştır. Elde edilen CZTS ince filminin yapısal ve morfolojik özellikleri sırasıyla X-ışını kırınımı (XRD), Raman Spektroskopisi, Taramalı Elektron Mikroskobu (SEM) ve Atomik kuvvet mikroskobu (AFM) yöntemleri kullanılarak araştırılmıştır. X-ışını kırınımı (XRD) analizi, elde edilen CZTS ince filminin (112), (200), (211), (220) ve (312) ve karakteristik yansımalarıyla kesterit fazına karşılık gelen kristal yapıya sahip olduğunu doğrulamıştır. Raman spektroskopisi, CZTS fazına özgü 331 cm⁻¹ civarında belirgin bir pikin ortaya çıktığını göstermiştir. Yüzey morfolojisi incelemeleri, tüm yüzeye homojen biçimde yayılmış ancak yer yer heterojen mikro yapılar gösteren sürekli bir film oluşumunu göstermiştir.

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Cite This Article

Yüksel, S., Soylu, M. S., Coşkun, C. (2025). Electrochemical Growth and Characterization of Cu₂ZnSnS₄ (CZTS) Thin Film. Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi, Cilt: 6 Sayı: 3, 878–885. https://doi.org/10.53501/rteufemud.1798707

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