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Journals / Journal of Scientific Reports-A / 2015 / Issue: 2015 Özel Sayısı Special Issue

SURFACE MORPHOLOGY and GaSe:In BINARY SEMICONDUCTOR GROWN BY BRIDGMAN/STOCKBARGER TECHNIQUE

GaSe:In İKİLİ BİLEŞİĞİNİN MODİFİYE BRIDGMAN/STOCKBARGER TEKNİĞİYLE BÜYÜTÜLMESİ VE YÜZEY MORFOLOJİSİ

Bekir Gürbulak
Mehmet Şata
Songül Duman
Salih Zeki Erzenoğlu
Afsoun Ashkhası
Yasin Öztırpan
Burcu Akça
Pages
65–76
Publication Date
2016-01-15
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The XRD results indicated that the grown films had hexzagonal structure and In doping increased the peak intensities.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The importance of semiconductors paving the way for nano technology has recently been increased.
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Key Findings & Data:The XRD results indicated that the grown films had hexzagonal structure and In doping increased the peak intensities.
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Conclusion & Impact:From the SEM results, it was observed that the average grain size values for GaSe:In was between 41,746-89,365 nm.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:GaSe:In · Kristal Büyütme · XRD

Abstract

The importance of semiconductors paving the way for nano technology has recently been increased. But, producing them easily and having their vast application fields are most important. For that reason, the crystals having wide application field and their characteristics which are fully determinated are needed. The main topic of this presentation is to grow GaSe:In single crystals by Modified Bridgman/Stockbarger method and to investiage their structural properties. GaSe:In binary semiconductor compound was grown in our crystal growth laboratory by the modified Bridgman-Stockbarger method. The structural and morphological characterizations of the samples were carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy-dispersive X-ray spectroscopy(EDX) techniques. The XRD results indicated that the grown films had hexzagonal structure and In doping increased the peak intensities. The lattice parameters were calculated to be a=b=3,749 (Å),  c=15,944 (Å) for InSe using the XRD results.The calculated lattice constants was found to be a=b=3,749 Å and c=15,944 Å for InSe using the XRD results. The crystallite size (3,986 Å), residual strain (6,55x10-4 lin-2 m-4) and dislocation density (4,8830x1014lin m-2) and number of crystallites per unit area (3,23x1017m-2) values have been calculated using powder XRD results (004). From the SEM results, it was observed that the average grain size values for GaSe:In was between 41,746-89,365 nm.

Özet

Nano teknolojinin ilerlemesinde yarıiletkenlerin önemi giderek artmaktadır. Ancak, kullanılacak yarıiletkenlerin hem kolay elde edilebilir hem de uygulama alanının geniş olması daha da önem arz etmektedir. Bu maksatla, uygulama alanları çok olan ve karakteristikleri tam olarak belirlenen yarıiletkenlere ihtiyaç duyulmaktadır. Güneş enerjisinin depolanması ve kullanılmasında çalışılan başlıca malzemeler arasında yarıiletkenler yer almaktadır. Sunumun temel konusu, GaSe:In yarıiletken bileşiğini Bridgman/Stockbarger Metoduyla büyütmek, büyütülen GaSe:In yarıiletkenin yapısal özelliklerini incelemektir. GaSe:In yarıiletken bileşiği, Bridgman/Stockbarger metodu ile büyütülmüştür. Numunelerin, yapısal ve morfolojik karakterizasyonları X-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve enerji ayrımlı X-ışını spektroskopisi (EDX) teknikleri kullanılarak gerçekleştirilmiştir. XRD sonuçları, büyütülen numunelerin hekzagonal kristal yapıya sahip olduklarını ve In katkılamanın pik şiddetlerini arttırdığını gösterdi. XRD sonuçları kullanılarak, örgü  parametreleri GaSe:In için a=b=3,749 (Å), c=15,944 (Å) olarak hesaplanmıştır. XRD sonuçlarından (004), kristal büyüklüğü (3,986 Å ), zorlanma derecesi (6,55x10 -4 lin -2 m -4 ) and dislokasyon yoğunluğu (4,8830x10 14 lin m -2 ) and birim alan başına kristal sayısı ( 3,23x10 17 m -2 ) değerleri hesaplanmıştır. SEM sonuçlarından, ortalama tanecik büyüklüğünün GaSe:In için 41,746-89,365 nm aralığında olduğu gözlenmiştir.

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Cite This Article

Gürbulak, B., Şata, M., Duman, S., Erzenoğlu, S. Z., Ashkhası, A., Öztırpan, Y., Akça, B. (2016). SURFACE MORPHOLOGY and GaSe:In BINARY SEMICONDUCTOR GROWN BY BRIDGMAN/STOCKBARGER TECHNIQUE. Journal of Scientific Reports-A, Issue: 2015 Özel Sayısı Special Issue, 65–76. https://ajindex.com/articles/1512130

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