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Journals / Gazi University Journal of Science Part A: Engineering and Innovation / 2026 / Volume: 8 Issue: 1

The Dependence of The Nickel Concentration of ZnO Thin Films for Gas Sensors Applications

Baktiyar Soltabayev(Nazarbayev University)0000-0002-5320-2576
İrmak Karaduman Er(Çankırı Karatekin Üniversitesi)0000-0003-3786-3865
Memet Ali Yıldırım(ERZINCAN UNIVERSITY)0000-0002-6175-1807
Aytunç Ateş(ANKARA YILDIRIM BEYAZIT UNIVERSITY)0000-0002-5802-9207
Selim Acar(Gazı University)0000-0003-4014-7800
Pages
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Publication Date
2021-03-29
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

It was concluded that the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changing the microstructure, morphology, and bandgap of ZnO material.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Undoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using the SILAR method.
📊
Key Findings & Data:The aim of this work is the analysis of NO gases using Zn1-xNixO sensors concentrations in the range from 100 ppb to 25 ppm.
💡
Conclusion & Impact:It was concluded that the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changing the microstructure, morphology, and bandgap of ZnO material.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Gas Sensor · ZnO · Low Temperature Range

Abstract

Undoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using the SILAR method. The aim of this work is the analysis of NO gases using Zn1-xNixO sensors concentrations in the range from 100 ppb to 25 ppm. The gas sensing properties of the films for low NO gas concentrations were carefully investigated within a temperature range from 35 to 135ºC. The gas measurement results revealed that the doping process was strongly affected by the response of Ni-doped ZnO thin films. The Zn0.75Ni0.25O sensor exhibited higher sensitivity, faster response, and recovery times for NO gas at low (100 ppb) concentration. It was concluded that the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changing the microstructure, morphology, and bandgap of ZnO material.

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Cite This Article

Soltabayev, B., Er, İ. K., Yıldırım, M. A., Ateş, A., Acar, S. (2021). The Dependence of The Nickel Concentration of ZnO Thin Films for Gas Sensors Applications. Gazi University Journal of Science Part A: Engineering and Innovation, Volume: 8 Issue: 1. https://ajindex.com/articles/1398650

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