From results obtained, it has been seen that the fabricated devices show photodiode properties, and as a result, they can be employed in opto-electronic applications.
📌 3 Key Takeaways
🎯
Objective & Hypothesis:In this work, metal-semiconductor photodiodes with organic interlayers were produced, and their electrical properties were investigated under different light intensities.
📊
Key Findings & Data:CongoRed was used as interlayer and grown as a thin film using spin coating technique on p-type silicon substrates cleaned by different chemical methods.
💡
Conclusion & Impact:From results obtained, it has been seen that the fabricated devices show photodiode properties, and as a result, they can be employed in opto-electronic applications.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Schottky Diode · Photodiode · Organic Thin Film
Abstract
In this work, metal-semiconductor photodiodes with organic interlayers were produced, and their electrical properties were investigated under different light intensities. CongoRed was used as interlayer and grown as a thin film using spin coating technique on p-type silicon substrates cleaned by different chemical methods. The changes in electrical parameters of completed Al/CongoRed/p-Si/Al diodes were investigated under dark and different light intensity. From results obtained, it has been seen that the fabricated devices show photodiode properties, and as a result, they can be employed in opto-electronic applications.
Karadeniz, S., Barış, B., Karadeniz, H., Yıldırım, M. (2022). The Production of Organic Photodetectors and Determination of Electrical Properties for Optical Sensor Applications. Gazi University Journal of Science Part A: Engineering and Innovation, Volume: 9 Issue: 3. https://doi.org/10.54287/gujsa.1141142
Aoki, Y. (2017). Photovoltaic performance of Organic Photovoltaics for indoor energy harvester. Organic Electronics, 48, 194-197. doi:10.1016/j.orgel.2017.05.023
Attia, A. A., Saadeldin, M. M., Soliman, H. S., Gadallah, A.-S., & Sawaby, K. (2016). Structural and optical properties of p-quaterphenyl thin films and application in organic/inorganic photodiodes. Optical Materials, 62, 711-716. doi:10.1016/j.optmat.2016.10.046
Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi:10.1063/1.337372
Cavas, M., Farag, A. A. M., Alahmed, Z. A., & Yakuphanoglu, F. (2013). Photosensors based on Ni-doped ZnO/p-Si junction prepared by sol-gel method, Journal of Electroceramics, 31(3-4), 298-308. doi:10.1007/s10832-013-9839-3
Chouket, A., Elhouichet, H., Koyama, H., Gelloz, B., Oueslati, M., & Koshida, N. (2010). Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory. Thin Solid Films, 518(6/1), S212-S216. doi:10.1016/j.tsf.2009.10.091
Dahlan, A. S., Tataroglu, A., Al-Ghamdi A. A., Al-Ghamdi, A. A., Bin-Omran, S., Al-Turki, Y., El-Tantawy, F., & Yakuphanoglu, F. (2015). Photodiode and photocapacitor properties of Au/CdTc/p-Si/Al device. Journal of Alloys and Compounds, 646, 1151-1156. doi:10.1016/j.jallcom.2015.06.068
Dayan, O., Imer, A. G., Al-Sehemi, A. G., Özdemir, N., Dere, A., Şerbetçi, Z., Al-Ghamdi, A. A., & Yakuphanoglu, F. (2020). Photoresponsivity and photodetectivity properties of copper complex-based photodiode. Journal of Molecular Structure, 1200, 127062. doi:10.1016/j.molstruc.2019.127062
Imer, A. G., Dere, A., Al-Sehemi, A. G., Dayan, O., Serbetci, Z., Al-Ghamdi, A. A., & Yakuphanoglu, F. (2019). Photosensing properties of ruthenium (II) complex-based photodiode. Applied Physics A, 125(3), 204. doi:10.1007/s00339-019-2504-1
Kaçuş, H., Çırak, Ç., & Aydoğan, Ş. (2020). Effect of illumination intensity on the characteristics of Co/Congo Red/p-Si/Al hybrid photodiode. Applied Physics A, 126(2), 139. doi:10.1007/s00339-019-3242-0
Kocyigit, A., Yılmaz, M., Aydogan, S., İncekara, Ü., & Kacus, H. (2021). Comparison of n and p type Si-based Schottky photodiode with interlayered Congo red dye. Materials Science in Semiconductor Processing, 135, 106045. doi:10.1016/j.mssp.2021.106045
Kocyigit, A., Yılmaz, M., İncekara, Ü., Şahin, Y., & Aydoğan, Ş. (2022). The light detection performance of the congo red dye in a Schottky type photodiode. Chemical Physics Letters, 800, 139673. doi:10.1016/j.cplett.2022.139673
Kyoung, S., Jung, E.-S., & Sung, M. Y. (2016). Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode. Microelectronic Engineering, 154, 69-73. doi:10.1016/j.mee.2016.01.013
Manifacier, J.-C., Brortryb, N., Ardebili, R. & Charles, J.-P. (1988). Schottky diode: Comments concerning the diode parameters determination from the forward I‐V plot. Journal of Applied Physics, 64(5), 2502-2504. doi:10.1063/1.341632
McLean, A. B. (1986). Limitations to the Norde I-V plot. Semiconductor Science and Technology, 1(3), 177-179. doi:10.1088/0268-1242/1/3/003
Norde, H. (1979). A modified forward I‐V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7), 5052-5053. doi:10.1063/1.325607
Pham, V. P., Manivannan, G., & Lessard, R. A. (1995). New azo-dye-doped polymer systems as dynamic holographic recording media. Applied Physics A, 60(3), 239-242. doi:10.1007/BF01538397
Yıldırım, M. (2019). Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters. Journal of Alloys and Compounds, 773, 890-904. doi:10.1016/j.jallcom.2018.09.276