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Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2024 / Cilt: 14 Sayı: 4

Effect Annealing Temperature on Structural, Morphological and Luminescence Properties of ZnO Thin Films

ZnO İnce Filmlerin Yapısal, Morfolojik ve Lüminesans Özelliklerine Tavlama Sıcaklığının Etkisi

Osman Salih Gündoğdu(BALIKESİR ÜNİVERSİTESİ, FEN BİLİMLERİ ENSTİTÜSÜ)0009-0008-9417-4824
Elif Güngör(BALIKESİR ÜNİVERSİTESİ, FEN BİLİMLERİ ENSTİTÜSÜ)0000-0002-7158-9604
Pages
1529–1537
Publication Date
2024-12-01
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

XRD structure analysis results showed that the films were amorphous at 150 °C and 250 °C and hexagonal wurtzite crystal structure at 350 °C, 450 °C and 550 °C.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, ZnO thin films were fabricated on glass substrates by dip coating method at different annealing temperatures.
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Key Findings & Data:XRD structure analysis results showed that the films were amorphous at 150 °C and 250 °C and hexagonal wurtzite crystal structure at 350 °C, 450 °C and 550 °C.
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Conclusion & Impact:The produced films can be used as alternative materials in optoelectronic devices emitting violet light.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:ZnO · Sol-jel · Nanoyapı

Abstract

In this study, ZnO thin films were fabricated on glass substrates by dip coating method at different annealing temperatures. The effect of annealing temperature on the structural, morphological and photoluminescence properties of the films was investigated. XRD structure analysis results showed that the films were amorphous at 150 °C and 250 °C and hexagonal wurtzite crystal structure at 350 °C, 450 °C and 550 °C. The structure parameters of the films were calculated according to the preferential orientation plane (002). SEM surface images showed that the films were homogeneously coated with increasing annealing temperatures. From the SEM cross-sectional images, it was determined that the thicknesses ranged from 407.096 - 616.310 nm. According to the photoluminescence spectra, the films showed a sharp peak at 385 nm and 765 nm and a broad band between 450 nm and 735 nm. The films were observed to have a violet emission in the near UV region (385 nm). As a result, the quality of the films improves with increasing annealing temperature and a homogeneous crystal structure is formed. Accordingly, the emission peak intensity of these films with a violet emission increases with increasing annealing temperature. The produced films can be used as alternative materials in optoelectronic devices emitting violet light.

Özet

Bu çalışmada, ZnO ince filmler farklı tavlama sıcaklıklarında dip coating (daldırma kaplama) metodu ile cam alt tabakalar üzerine üretildi. Filmlerin yapısal, morfolojik ve fotolüminesans özelliklerine tavlama sıcaklığının etkisi incelendi. XRD yapı analizi sonuçları filmlerin 150°C ve 250 °C’de amorf, 350 °C, 450 °C ve 550 °C’de ise hekzagonal wurtzite kristal yapıya sahip olduğunu gösterdi. Filmlerin yapı parametreleri tercihli yönelim düzlemine (002) göre hesaplandı. SEM yüzey görüntüleri, artan tavlama sıcaklıklarıyla filmlerin homojen bir şekilde kaplandığını gösterdi. SEM kesit görüntülerinden kalınlıkların 407.096 nm-616.310 nm aralığında olduğu belirlendi. Fotolüminesans spektrumlarına göre filmler 385 nm ve 765 nm’de keskin bir pik ve 450 nm ile 735 nm arasında geniş bir band gösterdi. Filmler yakın UV bölgesinde (385 nm) mor bir emisyona sahip olduğu görüldü. Sonuç olarak, tavlama sıcaklığının artmasıyla filmlerin kalitesi iyileşmekte ve homojen bir kristal yapı oluşmaktadır. Buna bağlı olarak da mor renkte bir emisyonuna sahip bu filmlerin tavlama sıcaklığının artması ile emisyon pik şiddeti artmaktadır. Üretilen filmler, mor ışık yayan optoelektronik aletlerde alternatif malzeme olarak kullanılabilir.

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Cite This Article

Gündoğdu, O. S., Güngör, E. (2024). Effect Annealing Temperature on Structural, Morphological and Luminescence Properties of ZnO Thin Films. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 14 Sayı: 4, 1529–1537. https://doi.org/10.21597/jist.1520695

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