Quantum Transport Properties of InAs NWFET with Surface Traps

Abstract

The quantum transport properties of InAs nanowire field effect transistor (NWFET) have been calculated and analyzed depending on the surface trap concentrations. Surface traps can be either impurity atoms, dangling bonds or structural deformations. Here, we have left some In and As atoms unsaturated to obtain surface traps. Our calculations show that the on-state voltage increases as the surface trap concentration increases. Within an equivalent circuit model, we have found that the effective field mobility is as low as 250 cm2/V.s following with small transconductance value of 2.4 nS for our simulated device. This shows that surface traps significantly effect the benchmarking properties of InAs NWFET.