Dergiler / Turkish Journal of Physics / 1999 / Cilt: 23 - Sayı: 6
Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser
- Sayfa
- 951–958
- DOI
- —
Özet
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å are thermally evaporated onto Si(111) under vacuum pressure \sim 10-5 Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are (4.6-6.5) mm thick and have a Ge fraction of x = 6-8.2%.
Abstract
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å are thermally evaporated onto Si(111) under vacuum pressure \sim 10-5 Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are (4.6-6.5) mm thick and have a Ge fraction of x = 6-8.2%.