Dergiler / Turkish Journal of Physics / 2002 / Cilt: 26 - Sayı: 4
Effects of Substrate Temperature on Properties of a-SiNx:H Films
- Sayfa
- 269–276
- DOI
- —
Özet
Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.
Abstract
Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.