Dergiler / Turkish Journal of Physics / 2005 / Cilt: 29 - Sayı: 4
Some Physical Properties of g Irradiated Gex(As2Te3)100 - x Chalcogenide System
- Sayfa
- 223–232
- DOI
- —
Özet
The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.
Abstract
The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.