Dergiler / Turkish Journal of Physics / 2010 / Cilt: 34 - Sayı: 2
Photocurrent and surface recombination mechanisms in the InxGa1-xN\slashGaN different-sized quantum dot solar cells
- Sayfa
- 97–106
- DOI
- —
Özet
We present a p-i-n structured solar cell with stacked layers of InxGa1-xN Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in InxGa1-xN QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow'' solar cell can be designed.
Abstract
We present a p-i-n structured solar cell with stacked layers of InxGa1-xN Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in InxGa1-xN QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a ``rainbow'' solar cell can be designed.