Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Abstract

The magnetoresistive NiFe/Pt sensor was fabricated by using standard microlithography and sputter depositiontechniques and then the magnetic and magnetotransport properties were investigated. The magnetic propertiesof the sample show that the easy axis of magnetization prefers a predefined direction along the Hall bar. Moreover,the sample has uniaxial magnetic anisotropy due to the growth-induced magnetic anisotropy. On the other hand, theAnisotropic magnetoresistance (AMR) and the Planar Hall effect (PHE) of the sample were investigated in detail between0°and 360°. The angle-dependent AMR and PHE signals at the in-plane magnetic field of constant magnitudeintersect at certain angles. At these angles, the presence of unusual peaks and valleys was observed. This is proof thatAMR and PHE curves had strongly affected each other at certain angles.