An inductorless wideband LNA with a new noise canceling technique

Abstract

An inductorless wideband low-noise ampli er (LNA) employing a new noise canceling technique for multi- standard applications is presented. The main ampli er has a cascode common gate structure, which provides good input impedance matching and isolation. The proposed noise canceling technique not only improves the noise gure and power gain but also embeds a g m -boosting technique in itself, which reduces the power consumption of the main ampli er. Using current-steering and current-reuse techniques in the noise canceling branch makes the design realizable and low power. The proposed LNA is simulated and optimized in 0.13m CMOS technology. The LNA achieves a noise gure of 2.8{3.4 dB, power gain of 19.2 dB, and input impedance matching better than {10.5 dB over bandwidth of 0.04{4.6 GHz. It consumes only 8.5 mW from 1.2 V supply voltage, which makes it a low power LNA.