Efficy and Safety of High-Power Diode Laser at 1060 nm for Skin Rejuvenation Treatment

Abstract

The use of a high-power 1060 nm diode laser, with hundreds of milliseconds scale emission capabilities, is a novelmethod for skin rejuvenation that could emulate the efficy and safety of the long-pulse 1064nm Nd: YAG solid-statelaser, while keeping the advantages of semiconductor lasers: pulse quality, contact cooling and low maintenance.The patient was a 43-year-old Caucasian woman with Fitzpatrick Skin Phototype II, presenting facial sagginess andnasogenian fold. A 4 sessions treatment (one every six weeks) was performed by a High Power Diode Laser at 1060 nm.The laser parameters were: 10J/cm 2 flence and 400ms pulse duration. A 4mm distancer was placed on the hand-piece.An infrared thermometer was used to ensure that the skin reached 42ºC.The high-power diode laser at 1060 nm is a new and more approachable alternative that has demonstrated to be effctive and safe for facial rejuvenation