Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

Abstract

Low-dimensional systems, consisting of GaAs / InGaAs heterostructures, have attractedconsiderable attention due to their many applications in optoelectronic and microelectronicdevices. In the present work, the electron and the heavy-hole ground state energy in anInGaAs/GaAs cylindrical quantum well wires (CQWWs) is investigated with the considerationof geometrical confinement. The ground state energy was calculated as a function ofhydrostatic pressure and temperature. Under the constant pressure and at a certain magneticfield value, while the ground state energy of the electron and the hole decreases depending onthe temperature, it is observed that the energy increases as the hydrostatic pressure increasesunder the constant temperature. These calculations are interpreted with graphics.