Radiation induced defect production in iridium doped silicon

Özet

Presented are the results of studies of some parameters of the Ir-centers in n-Si and of defect production processes in n &#8212; Si < Ir > under the effect of $^{60}Co$ $\gamma$-rays. After irradiation with a does of $10^7$ Gy five energy levels have been observed in the DLTS spectrum of n &#8212; Si < Ir >. A conclusion has been drawn that of these the $E_c$ &#8212; 0.20 eV level belongs to the "P atom +Ir atom + Vacancy" complex, two levels belong to well- known conventional A- and E- centers and the rest to Ir centers in silicon themselves.