Dergiler / Turkish Journal of Physics / 1995 / Cilt: 19 - Sayı: 4
The annealing effect on the capacitance-voltage characteristic of SnO2/a- SiC:H (p+-type)/a-Si: H/a- Si: H(n+-type)/Al structure
- Sayfa
- 595–600
- DOI
- —
Dergiler / Turkish Journal of Physics / 1995 / Cilt: 19 - Sayı: 4