Ground-state binding energies of substitutional Cu,Ag and Au impurity atoms in $Ge_{1-x}Si_x$ crystals

Özet

The ground-state binding energies of substitutional $Cu_s$, $Ag_s$ and $Au_s$ impurity atoms in $Ge_{1-x}Si_x(0 \leq \times \leq 0,3)$ have been determined on the basis of Hall measurements. It is shown that the averaged activation energies $\Delta E$ of all explored impurity levels in $Ge_{1-x}Si_x$ grow linearly with Si concentration in crystals. Random-alloy splitting of the ground-states of the impurities in the crystals is discussed. A conclusion is made due to multiplicity of possible acceptor states of substitutional atoms of this impurities in $Ge_{1-x}Si_x$ and Si.