Structure of the conduction band and electronic properties of the Te-doped $In_{0.5}Ga_{0.5}Sb$ solid solutions

Özet

In present paper we report the results of a detail investigation of the scattering mechanisms of electrons in the $In_{1-x}Ga_xSb$ solid solutions with equimolar compo¬sition (a; = 0.5). Electrical conductivity, $\sigma$, thermal power, $\alpha_o$, magnetothermal power, $\delta \alpha_{\infty}$; and Hall coefficient R have been measured at room temperature on samples with concentration in the range $3 x 10^17 \leq n \leq 6 x 10^18cm^{-3}$ . From a good match between theoretical curve with r = 1/2 and experimental data of $\alpha_0(n)$ and $\delta \alpha_{\infty}(ni)$ it is concluded that electrons are scattered by optical phonons. It is shown that concentration dependence of electronic effective mass m* corresponds to the Kane theory up to n = 6 x 1018 $cm^{-3}$. The values of effective mass at the bottom of conduction band $(m_0^* = O.O25m_o)$ and the band gap $(\in_g = 0.36eV)$ have been calculated.