A simple method to determine carrier concentration dependence of mobility in a GaAs MODFET structure

Özet

A simple method of determining the relation between the sheet carrier concentration, $n_s$, and the drift mobility, $\mu$, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported. The method is valid within the regime where the well-known charge control model is obeyed. The relation between $\mu$ and $n_s$ is found to be obeying the power law of $\mu$ $\alpha$ $n_s^{0.7}$ at a temperature of 4.2 K for a 20nm thick spacer layered MODFET.