The effect of halogen impurities on electroconductivity of chalcogenide glass semiconductor Se-As system

Özet

DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 % As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between 10-3 and 10-2 at %. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers (C-1, C+3) and to the occurrence of new Cl-, Br- centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.