Dergiler / Turkish Journal of Physics / 1999 / Cilt: 23 - Sayı: 4
An Investigation of Electrical Properties of Porous Silicon
- Sayfa
- 789–797
- DOI
- —
Özet
In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 W cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C2H2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm2) was compared with structures that formed at high current density (J = 30 mA/cm2). Both structures and electrical properties were investigated.
Abstract
In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 W cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C2H2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm2) was compared with structures that formed at high current density (J = 30 mA/cm2). Both structures and electrical properties were investigated.