Barrier heights of antimony/ and bismuth/ P-silcon (100) junctions

Özet

Junctions were fabricated in vacuum of about $10^{-5}$ Torr by thermal evaporation of Sb or Bi onto chemically etched p-type silicon (100) substrates. The electrical properties were studied by current voltage (I-V) measurements. Some of the Sb and Bi junctions were heated-treated for 1/2 hr at 200 and 150°C, respectively. The barrier height (BH) was equal to 0.64 eV for both as-deposited and heat-treated Sb junctions, while it was 0.56 and 0.74 eV for, as-deposited and heat-treated Bi Junc­tions, respectively. These observatimons indicate that for Sb junctions, annealing at a temperature of 200° C resulted only in partial elimination of any interfacial layer (oxide), while it modified the density of interface states. On the other hand, for Bi junctions, heat-treatment at 150° C eliminates completely the oxide layer, while also modifying the density of interface states.