Dergiler / Turkish Journal of Physics / 2001 / Cilt: 25 - Sayı: 4
Built-in Potential Measurements in a-Si:H p-i-n Solar Cells
- Sayfa
- 375–383
- DOI
- —
Özet
We have measured the open-circuit voltage Voc and the short-circuit current density Jsc of amorphous silicon (a-Si:H) p-i-n solar cells deposited by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at different monochromatic illuminations, and temperatures. From the measurements, the built-in potential Vbi was determined by using two different methods: activation energy and differential temperature. The results from both methods were analyzed and compared as a function of excitation wavelength. It was observed that there is good agreement between the two methods. We found that Vbi increases until about 650 nm, and then decreases with increasing wavelength. This behaviour is explained and interpreted in different ways.
Abstract
We have measured the open-circuit voltage Voc and the short-circuit current density Jsc of amorphous silicon (a-Si:H) p-i-n solar cells deposited by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at different monochromatic illuminations, and temperatures. From the measurements, the built-in potential Vbi was determined by using two different methods: activation energy and differential temperature. The results from both methods were analyzed and compared as a function of excitation wavelength. It was observed that there is good agreement between the two methods. We found that Vbi increases until about 650 nm, and then decreases with increasing wavelength. This behaviour is explained and interpreted in different ways.