Dergiler / Turkish Journal of Physics / 2002 / Cilt: 26 - Sayı: 1
The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon
- Sayfa
- 53–59
- DOI
- —
Özet
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250oC, 23-200oC and 600-1050oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm-1 and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.
Abstract
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass and single cyrstalline silicon substrates by means of d.c. magnetron sputtering technique. a-Si:H/glass and a-Si:H/c-Si samples were annealed in the temperature range of 23-250oC, 23-200oC and 600-1050oC, respectively. The effect of annealing on the a-Si:H films were examined by means of Infrared vibrational transmittance spectrum technique (IR) in the wavenumber range 4000-400 cm-1 and Scanning Electron Microsope (SEM). The results were interpreted in terms of hydrogen diffusion.