Promising features of In 0 : 5 Ga 0 : 5 N/Al 0 : 2 Ga 0 : 8 N quantum dot lasers

Abstract

The group-III nitrides, InN, GaN, and AlN, and their alloys have emerged as one of the most important material classes for optoelectronic devices. The incorporation of quantum dots (QDs) as active material improves the performance of conventional optoelectronic devices, such as laser diodes. In this study, we present a theoretical analysis of the gain characteristics of In x Ga 1