Dergiler / Turkish Journal of Physics / 2002 / Cilt: 26 - Sayı: 1
Effect of rf power on the electrical properties of glow-discharge a-Si:H
- Sayfa
- 25–28
- DOI
- —
Özet
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.
Abstract
Hydrogenated amorphous silicon films were prepared in an rf glow-discharge system by decomposing undiluted silane at various rf power densities. Dark conductivity and photoconductivity of the films have been measured in the temperature range 420K-100K at four different photon fluxes. It was observed that both dark conductivity and photoconductivity increase with increasing rf power density.