Dergiler / Turkish Journal of Physics / 2004 / Cilt: 28 - Sayı: 5
Single Mode Optical Radiation Distribution and Reflectivity Calculations in Novel-Hot Electron Light Emission and Lasing In Semiconductor Heterostructures VCSELs
- Sayfa
- 341–347
- DOI
- —
Özet
In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, l°. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.
Abstract
In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, l°. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.