Dergiler / Turkish Journal of Physics / 2005 / Cilt: 29 - Sayı: 4
Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films
- Sayfa
- 243–248
- DOI
- —
Özet
This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the same doping concentration of 10-4 (to develop H2Se/SiH4 and H2S/SiH4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.
Abstract
This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the same doping concentration of 10-4 (to develop H2Se/SiH4 and H2S/SiH4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.