Dergiler / Turkish Journal of Physics / 2006 / Cilt: 30 - Sayı: 2
Peculiarities of the Electric and Thermoelectric Properties of GaTe
- Sayfa
- 95–102
- DOI
- —
Özet
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of 3.8 \times 1012 cm-3 at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 \times 10-3 ohm-1 cm-1 and 7079 cm2/V \cdot s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 m° and 0.1174 m° , respectively
Abstract
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of 3.8 \times 1012 cm-3 at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 \times 10-3 ohm-1 cm-1 and 7079 cm2/V \cdot s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 m° and 0.1174 m° , respectively