Dergiler / Turkish Journal of Physics / 2012 / Cilt: 36 - Sayı: 2
The influence of confinements on the photon flux spectra in amorphous silicon quantum dots
- Sayfa
- 197–205
- DOI
- —
Özet
We have theoretically calculated the photon flux of radiative recombination in amorphous silicon quantum dots (a-SiQDs) at room temperature. These quantum dots have been ranged in their diameter 1 to 4 nm. The convolution of probability density function of deepest energy states of conduction PC(E) and valence PV(E) bands within the capture volume was adopted. The behavior of this function can be classified into four regions according to the quantum dot size. The effect of spatial and quantum confinements on the peak value of photon flux must be taken into account. We found that a blue shift is classified by the quantum confinement effect on the photon flux value, while a red shift appeared via the spatial confinement effect.
Abstract
We have theoretically calculated the photon flux of radiative recombination in amorphous silicon quantum dots (a-SiQDs) at room temperature. These quantum dots have been ranged in their diameter 1 to 4 nm. The convolution of probability density function of deepest energy states of conduction PC(E) and valence PV(E) bands within the capture volume was adopted. The behavior of this function can be classified into four regions according to the quantum dot size. The effect of spatial and quantum confinements on the peak value of photon flux must be taken into account. We found that a blue shift is classified by the quantum confinement effect on the photon flux value, while a red shift appeared via the spatial confinement effect.