IMPROVING THE SHEET RESISTANCE OF CVD-GRAPHENE FILMS VIA DOPING

Özet

We report on the synthesize high quality and large area graphene and modifying their electrical properties by non-covalent doping methods. Large area graphene film was synthesized by chemical vapor deposition method on pre-treatment Cu foil and demonstrated to be greatly efficient to the quality of graphene. The films are mostly monolayer with the transmittance of about 98%. Graphene film was transferred onto Si/SiO2 substrate followed by various Self-Assembled Monolayers (SAMs) solution dropping. After doping, the number of charge carrier changes due to the nature of SAMs. Electrical measurement shows that the doping method can effectively manipulate the electrical properties of graphene and also doped graphene sheets can use in optoelectronics, solar cells, and thermoelectric solar cells etc.