| Evidence for the transport-related effects in the photoluminescence from porous silicon | A. M. EVSTIGNEEV,M. Ya. VALAKH,A. V. SACHENKO,G. Yu. RUDKO,G. A. SUKACH,M. A. EVSTIGNEEV,S.V. SVECHNIKOV | 211–215 |
| The influence of exchange-correlation potential on the total-energy calculations of Li, Na and K | N. TUĞLUOĞLU,R. H. MUTLU | 216–222 |
| Fine structure analysis of 4846.0$\AA$ and 4916.4$\AA$ bands of PbCl molecule | Arvind B. DARJI,Trikam M. PATEL,Mundan B. SURESHKUMAR,Purushotam M. SHAH | 223–231 |
| Fine structure analysis of 4846.0$AA$ and 4916.4$AA$ bands of PbCl molecule | Arvind B. DARJI, Trikam M. PATEL, Mundan B. SURESHKUMAR, Purushotam M. SHAH | 223–231 |
| Sampling effects in reconstruction for digital amplitude holograms | M. Haluk GÜVEN,Tayfun ARI | 232–237 |
| Reconstruction from digital amplitude holograms and recording the hologram on Al layer by photolithography | M. Haluk GÜVEN,F. Necati ECEVİT,İsmail ATILGAN,Tayfun ARI | 238–243 |
| Surface area of synthetic zeolite 13x by gas adsorption | Recep YANIK | 244–248 |
| Light scattering measurements in nematic liquid crystals II. spectral analysis of laser light intensity fluctuations in the nematic liquid crystals, 8CB | RIDVAN KARAPINAR,Erol GÜNDÜZ | 249–256 |
| 1.55 $\mu m$ InGaAsP laser diode amplifier | M. Sadettin ÖZYAZICI | 257–262 |
| 1.55 $mu m$ InGaAsP laser diode amplifier | M. Sadettin ÖZYAZICI | 257–262 |
| A simple method to determine carrier concentration dependence of mobility in a GaAs MODFET structure | Mustafa EROL | 263–268 |
| Acceptor levels of substitutional Zn, Cd and Hg impurity atoms in $Ge_{1-x}Si_ x$ crystals | G. Kh. AZHDAROV,R. Z. KYAZIMZADE | 269–274 |
| Space distribution of pulsars | F. GÖK,M. A. ALPAR,O. H. GUSEINOV,I. M. YUSIFOV | 275–304 |