Dergiler / Journal of Smart Systems Research / 2022 / Cilt: 3 - Sayı: 1

EFFECT of TEMPERAUTRE on PACK SILICONIZING of Ti6Al4V ALLOY

Sayfa
11–21
Yayın Tarihi
2022-06-29
DOI
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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

Hardness of silicide layer measured by Vickers method and determined that the hardness ranges between 1170 Hv0,025 to 1450 HV 0,025 .

📌 3 Maddede Bu Makale

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Amaç & Hipotez:This study aims to investigate the temperature effects on silicide coating formed by pack siliconizing method on Ti6Al4V subsrate.
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Temel Bulgular & Veri:Pack siliconizing process was conducted out for 2h at 1000°C, 1100°C, 1200°C, in vacum atmosphere, by using Si as Si source, Al2O3 powder as filler and NH4Cl as an activator.
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Sonuç & Katkı:Hardness of silicide layer measured by Vickers method and determined that the hardness ranges between 1170 Hv0,025 to 1450 HV 0,025 .
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Pack cementation · pack siliconizing · diffusion coating

Abstract

This study aims to investigate the temperature effects on silicide coating formed by pack siliconizing method on Ti6Al4V subsrate. Pack siliconizing process was conducted out for 2h at 1000°C, 1100°C, 1200°C, in vacum atmosphere, by using Si as Si source, Al2O3 powder as filler and NH4Cl as an activator. The presence of the formed phases such as Ti5Si3, TiSi, TiSi2 on coating, and non-stoichiometric Al203 compound from the pack mixture was actualized by X-ray diffraction analysis (XRD). It was obeserved that the silicide coating on Ti6Al4V substrate is compact, dense and the coating thickness varies between 10.5-30.4 μm depending on the treatment temperature. The morphological feautres of the coating and dispersion of the elements in the silicide layer was examined by using electron microscope (SEM) and elemental analysis (EDS). Hardness of silicide layer measured by Vickers method and determined that the hardness ranges between 1170 Hv0,025 to 1450 HV 0,025 .

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Bu Makaleye Atıf Yap

TEPE, E. F., EFE, G. Ç., YENER, T. (2022). EFFECT of TEMPERAUTRE on PACK SILICONIZING of Ti6Al4V ALLOY. Journal of Smart Systems Research, Cilt: 3 - Sayı: 1, 11–21. https://ajindex.com/articles/854047

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Kaynakça (13)

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