KaydedilenlerDerginizi ekleyin

Dergiler / Turkish Journal of Physics / 2021 / Cilt: 45 - Sayı: 3

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

Ömer SEVGİLİ
Sayfa
159–168
Yayın Tarihi
2022-11-06
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The experimental results showed that the Mg2 Si can be used instead of conventionally used dielectric materials (SnO2 , SiO2 ).

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:The Al/Mg2Si/p-Si Schottky diode was fabricated using spin coating.
📊
Temel Bulgular & Veri:The real (ε′) and imaginary (ε′′) components of complex dielectric (ε*), the real (M′) and imaginary (M′′) components of complex electric modulus (M*) and AC electrical conductivity (σ AC ) of the fabricated Al/Mg2 Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz.
💡
Sonuç & Katkı:The experimental results showed that the Mg2 Si can be used instead of conventionally used dielectric materials (SnO2 , SiO2 ).
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri

Abstract

The Al/Mg2Si/p-Si Schottky diode was fabricated using spin coating. The real (ε′) and imaginary (ε′′) components of complex dielectric (ε*), the real (M′) and imaginary (M′′) components of complex electric modulus (M*) and AC electrical conductivity (σ AC ) of the fabricated Al/Mg2 Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz. The ε ′ and ε ′ ′ were obtained using the value of measured capacitance and conductance while the values of dielectric loss tangent (tanδ, M′, M′′ and σAC were obtained using the value of ε′ and ε′′. While the values of ε′, ε′′ and tanδ are almost independent of the frequency in the inversion and accumulation region, their value changes with the frequency, especially in the depletion region. The σAC was examined depending on the frequency and it was seen that its value increased with increasing frequency especially in depletion and accumulation region. The experimental results showed that the Mg2 Si can be used instead of conventionally used dielectric materials (SnO2 , SiO2 ).

🔖

Bu Makaleye Atıf Yap

SEVGİLİ, Ö. (2022). The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range. Turkish Journal of Physics, Cilt: 45 - Sayı: 3, 159–168. https://ajindex.com/articles/613907

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (5)

  1. Popescu M, Bunget I. Physics of Solid Dielectrics. Amsterdam, Netherlands: Elsevier, 1984
  2. Kwan CK. Dielectric Phenomena in Solids. Amsterdam, Netherlands: Elsevier, 2004
  3. Chelkowski A. Dielectric Physics. Amsterdam, Netherlands: Elsevier, 1980
  4. Lu L, Lai MO, Hoe ML. Formation of nanocrystalline Mg2 Si and Mg2 Si dispersion strengthened Mg-Al alloy by mechanical alloying. Nanostructured Materials 1998; 10 4: 551-563. doi: 10.1016/S0965-97739800102-0 [5] Mondolfo LF. Aluminum Alloys: Structure and Properties. London, UK: ButterWorth, 1976
  5. Tani J, Kido H. Thermoelectric properties of Bi-doped Mg2 Si semiconductors. Physica B: Condensed Matter 2005; 364 (1-4): 218-224. doi: 10.1016/j.physb.2005.04.017 [7] Roberts GA, Cairns EJ, Reimer JA. Magnesium silicide as a negative electrode material for lithium-ion batteries. Journal of Power Sources 2002; 110 2: 424-429. doi: 10.1016/S0378-77530200207-0 [8] Kim H, Choi J, Sohn HJ, Kang T. The insertion mechanism of lithium into Mg2Si anode material for Li-ion batteries. Journal of the Electrochemical Society 1999; 146 12: 4401-4405. doi: 10.1149/1.1392650 [9] Bux SK, Yeung MT, Toberer ES, Snyder GJ, Kaner RB et al. Mechanochemical synthesis and thermoelectric properties of high quality magnesium silicide. Journal of Materials Chemistry 2011; 21 33: 12259-12266. doi: 10.1039/C1JM10827A [10] Bose S, Acharya HN, Banerjee HD. Electrocal, thermal, thermoelectric and related properties of magnesium silicide semiconductor prepared from rice husk. Journal of Materials Science 1993; 28 20: 5461-5468. doi: 10.1007/BF00367816 [11] El-Amir Ahmed AM, Ohsawa T, Nabatame T, Ohi A, Wada Y et al. Ecofriendly Mg2Si-based photodi- ode for short-wavelength IR sensing. Materials Science in Semiconductor Processing 2019; 91: 222-229. doi: 10.1016/j.mssp.2018.11.033 [12] Sekino K, Midonoya M, Udono H, Yamada Y. Preparation of Schottky contacts on-type Mg2 Si single crystalline substrate. Physics Procedia 2011; 11: 171-173. doi: 10.1016/j.phpro.2011.01.047 [13] Kato T, Sago Y, Fujiwara H. Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients. Journal of Applied Physics 2011; 110: 063723. doi: 10.1063/1.3642965 [14] Lenčéš Z, Hirao K, Šajgalík P, Hoffmann M. Thermodynamic and dielectric properties of MgSiN2 ceramics. Key Engineering Materials 2006; 317-318: 857-860. doi: 10.4028/www.scientific.net/KEM.317-318.857 [15] Fu Z, Ma J, Liu P, Li Y, Zhang X. Crystal structure and microwave die