Dergiler / Cumhuriyet Science Journal / 2021 / Cilt: 42 - Sayı: 4

Characteristic of gap photodectored plasma cell

Sayfa
916–923
Yayın Tarihi
2022-10-12
DOI
—
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

According to the experimental results, it was seen that GaP can be optically excited with IR light when the appropriate distance between the electrodes and the appropriate gas pressure was adjusted.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:In the study, it was experimentally investigated the Microelectronic Gas Discharge System (MGDS) with Gallium Phosphate (GaP) cathode.
📊
Temel Bulgular & Veri:The system was operated in the dark and under different Infrared (IR) illumination intensities.
💡
Sonuç & Katkı:According to the experimental results, it was seen that GaP can be optically excited with IR light when the appropriate distance between the electrodes and the appropriate gas pressure was adjusted.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Alan Parametreleri

Abstract

In the study, it was experimentally investigated the Microelectronic Gas Discharge System (MGDS) with Gallium Phosphate (GaP) cathode. The system was operated in the dark and under different Infrared (IR) illumination intensities. The Current-Voltage Characteristic (CVC) was obtained for different IR illuminations under high-pressure conditions. IR illumination produced different electrical conductivities at high pressures. This reality shows that the system can operate more conveniently at high pressures for optoelectronic applications. It was determined that the system showed Negative Differential Resistance (NDR) and hysteresis behaviors when appropriate experimental parameters were set. It was seen that the pressure and distance between the electrodes has a significant factor in determining the hysteresis value. AVK, Discharge Light Emission (DLE), and hysteresis behaviors were investigated under different illumination intensities using a semiconductor plasma system. It has been observed that IR illumination creates different electrical conductivities at high pressures. This showed that the system can operate more conveniently at high pressures for optoelectronic applications. It has been observed that CVCs are more stable as the distance between the electrodes decreases. In this study, the IR sensitivity of GaP was tested for the first time. According to the experimental results, it was seen that GaP can be optically excited with IR light when the appropriate distance between the electrodes and the appropriate gas pressure was adjusted.

🔖

Bu Makaleye Atıf Yap

ÜNLÜ, D. Y., KURT, H. H. (2022). Characteristic of gap photodectored plasma cell. Cumhuriyet Science Journal, Cilt: 42 - Sayı: 4, 916–923. https://ajindex.com/articles/477565

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (17)

  1. Portsel L. M., Lodygin A. N., Astrov, Y. A., Townsend-like discharge: the suppression of instabilities by a semiconductor electrode, J. of Phys. D: Appl. Phys., 42 (23) (2009): 235208
  2. Weltmann K. D., Kolb J. F., Holub M., Uhrlandt D., Šimek M., Ostrikov K., Becker K. (2019). The future for plasma science and technology, Plas. Proc. and Poly., 16(1), 1800118
  3. Grill A., Cold plasma in materials fabrication, Vol
  4. IEEE Press, New York, 1994
  5. Lieberman M. A., Lichtenberg A. J., Principles of plasma discharges and materials processing, MRS Bullet., 30(12) (1994) 899-901
  6. Lodygin A. N., Portsel L. M., Astrov, Y. A., DC Townsend Discharge in Nitrogen: Temperature Dependent Phenomena, Contr. to Plasma Phys., 52(8) (2012) 682-691
  7. Salamov B. G., Kurt H. Y., Current instability in a planar gas discharge system with a large diameter semiconductor cathode, J. of Phys. D: Appl. Phys., 38(5) (2005) 682
  8. Gurevich E. L., Kittel S., Hergenröder R., Astrov Y. A., Portsel L. M., Lodygin A. N., Ankudinov A. V., Modification of GaAs surface by low current Townsend discharge, J. of Phys. D: Appl. Phys., 43(27) (2010) 275302
  9. Raizer Y. P., John E A., Gas discharge physics, Vol
  10. Berlin: Springer, 1997
  11. Chen Z. G., Cheng L., Lu G. Q. M., Zou J., Sulfur doped gallium phosphide nanowires and their optoelectronic properties, Nanotechnology, 21(37) (2010) 375701
  12. Liu F., Song Y. J., Xing Q. R., Hu M. L., Li Y. F., Wang C. L.,. Wang C. Y., Broadband terahertz pulses generated by a compact femtosecond photonic crystal fiber amplifier, IEEE Phot. Tech. Let., 22(11) (2010) 814-816
  13. McIntosh D., Zhou Q., Lara F. J., Landers J., Campbell J. C., Flip-chip bonded GaP photodiodes for detection of 400-to 480-nm fluorescence, IEEE Phot. Tech. Let., 23(13) (2011) 878-880
  14. Zhuo L., Hai-Yun L., Xin-Xin W., Bo L. V., Zhi Cheng G., Li-Ming W., Determination of ionization coefficient of atmospheric helium in dielectric barrier discharge, Chinese Phys. Let., 25(6) (2008) 2136
  15. Luo H., Liang Z., Lv B., Wang X., Guan Z., Wang L., Observation of the transition from a Townsend discharge to a glow discharge in helium at atmospheric pressure, App. Phys. Let., 91(22) (2007) 221504
  16. Kurt H. Y., Exploration of the Townsend regime by discharge light emission in a gas discharge device, Chinese Phys. B, 23(1) (2013) 015201
  17. Kurt H. H., Tanrıverdi E., The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System., J.