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Dergiler / Turkish Journal of Physics / 2005 / Cilt: 29 - Sayı: 6

Origins of Reverse Bias Currents in a Typical BPW34 Photodiode

HABİBE BAYHAN
ŞADAN ÖZDEN
Sayfa
371–378
DOI
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We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.

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Amaç & Hipotez:Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V.
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Temel Bulgular & Veri:Various transport models have been applied to analyze the temperature dependence of the reverse current-voltage data.
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Sonuç & Katkı:We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.
🔬Tür:Modelleme & Sayısal Simülasyon
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:BPW34 · PIN · Photodiode

Özet

Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been applied to analyze the temperature dependence of the reverse current-voltage data. We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.

Abstract

Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been applied to analyze the temperature dependence of the reverse current-voltage data. We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.

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Bu Makaleye Atıf Yap

BAYHAN, H., ÖZDEN, Ş. (2005). Origins of Reverse Bias Currents in a Typical BPW34 Photodiode. Turkish Journal of Physics, Cilt: 29 - Sayı: 6, 371–378. https://ajindex.com/articles/378444

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Kaynakça (7)

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