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AI InsightThe temperature dependence of the saturation current and the diode ideality factors of the as-grown and CdCl2 processed CdTe solar cells are shown to be well described by this model.
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Özet
The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300~K was investigated. The current-voltage properties of these solar cells is explained via tunnelling enhanced bulk and interface recombination models which give a quantitative description of the electronic loss mechanisms in the chalcopyrite-based heterojunction solar cells. The temperature dependence of the saturation current and the diode ideality factors of the as-grown and CdCl2 processed CdTe solar cells are shown to be well described by this model.
Abstract
The dominant dark current transport mechanism in as-grown and CdCl2 processed CdS/CdTe heterojunction solar cells for temperatures below 300~K was investigated. The current-voltage properties of these solar cells is explained via tunnelling enhanced bulk and interface recombination models which give a quantitative description of the electronic loss mechanisms in the chalcopyrite-based heterojunction solar cells. The temperature dependence of the saturation current and the diode ideality factors of the as-grown and CdCl2 processed CdTe solar cells are shown to be well described by this model.