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AI InsightThe processed PLED device exhibited a turn-on voltage of 3.6 V and a maximum luminance of 575.5 cd m-2 at 2.8 mA.
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Özet
Phosphorescent polymer light emitting diodes (PLEDs) have been fabricated and characterized. A PLED was configured in an ITO/PEDOT:PSS/TPD:PBD:PVK:Ir(mppy)3/LiF/Al device structure. Thicknesses of the active layer were optimized for an efficient phosphorescent organic light-emitting diode (OLED) device. The uniform mixing of the active layer was varied with different thicknesses. A hole transport layer of PEDOT:PSS was deposited in a thickness of 35 nm and an emissive layer of TPD:PBD:PVK:Ir(mppy)3 was deposited in thicknesses of 90 nm, 56 nm, 40 nm, and 35 nm. The 56 nm thickness of the active layer was determined as the proper thickness according to results of current density, luminance, and voltage characteristics of the PLED. The processed PLED device exhibited a turn-on voltage of 3.6 V and a maximum luminance of 575.5 cd m-2 at 2.8 mA.
Abstract
Phosphorescent polymer light emitting diodes (PLEDs) have been fabricated and characterized. A PLED was configured in an ITO/PEDOT:PSS/TPD:PBD:PVK:Ir(mppy)3/LiF/Al device structure. Thicknesses of the active layer were optimized for an efficient phosphorescent organic light-emitting diode (OLED) device. The uniform mixing of the active layer was varied with different thicknesses. A hole transport layer of PEDOT:PSS was deposited in a thickness of 35 nm and an emissive layer of TPD:PBD:PVK:Ir(mppy)3 was deposited in thicknesses of 90 nm, 56 nm, 40 nm, and 35 nm. The 56 nm thickness of the active layer was determined as the proper thickness according to results of current density, luminance, and voltage characteristics of the PLED. The processed PLED device exhibited a turn-on voltage of 3.6 V and a maximum luminance of 575.5 cd m-2 at 2.8 mA.