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Dergiler / International Journal of Advances in Engineering and Pure Sciences / 2013 / Cilt: 25 - Sayı: 2

Effects of Annealing on Reflectance of ZnO Grown by PFCVAD

Ebru Senadim TUZEMEN
Sezai ELAGOZ
Hulya SAHİN
Kamuran KARA
Ramazan ESEN
Ahmet BULUT
Sayfa
41–50
Yayın Tarihi
2013-07-04
DOI
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In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:ZnO thin film was prepared onto microscope glass slide substrate by using pulsed filtered cathodic vacuum arc deposition system.
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Temel Bulgular & Veri:The grain size increases with the increase of annealing temperature.
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Sonuç & Katkı:In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Zinc oxide (ZnO) · Annealing temperature · Diffuse and specular reflectance

Özet

ZnO thin film was prepared onto microscope glass slide substrate by using pulsed filtered cathodic vacuum arc deposition system. ZnO thin film was thermally annealed for one hour at three different temperatures in air. The film structure was investigated as a function of annealing temperature by x-ray diffraction (XRD). As-deposited film shows amorphous property. The grain size increases with the increase of annealing temperature. The dependence of optical properties on annealing was investigated using UV–Vis-NIR spectrophotometer. When the annealing temperature increased, the diffuse reflection was reduced. When the angle of incidence specular reflectance increased from angle of 30 degrees to angle of 60 degrees, specular reflectance was increased. When annealing temperature increased, specular reflectance was also increased for angle of 30 and 60 degrees. In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.

Abstract

ZnO thin film was prepared onto microscope glass slide substrate by using pulsed filtered cathodic vacuum arc deposition system. ZnO thin film was thermally annealed for one hour at three different temperatures in air. The film structure was investigated as a function of annealing temperature by x-ray diffraction (XRD). As-deposited film shows amorphous property. The grain size increases with the increase of annealing temperature. The dependence of optical properties on annealing was investigated using UV–Vis-NIR spectrophotometer. When the annealing temperature increased, the diffuse reflection was reduced. When the angle of incidence specular reflectance increased from angle of 30 degrees to angle of 60 degrees, specular reflectance was increased. When annealing temperature increased, specular reflectance was also increased for angle of 30 and 60 degrees. In addition the optical band gap of ZnO film was observed and found to be varying from 3.22 eV to 3.25 eV with the annealing temperature.

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Bu Makaleye Atıf Yap

TUZEMEN, E. S., ELAGOZ, S., SAHİN, H., KARA, K., ESEN, R., BULUT, A. (2013). Effects of Annealing on Reflectance of ZnO Grown by PFCVAD. International Journal of Advances in Engineering and Pure Sciences, Cilt: 25 - Sayı: 2, 41–50. https://ajindex.com/articles/257974

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Kaynakça (11)

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