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Dergiler / Turkish Journal of Electrical Engineering and Computer Science / 2011 / Cilt: 19 - Sayı: 1

Simulation of storage time versus reverse bias current for p+n and pin diodes

Mehmet Serhat KESERLİOĞLU
Hasan Hüseyin ERKAYA
Sayfa
87–96
Yayın Tarihi
2011-01-01
DOI
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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The transient response for voltage and current was determined.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime.
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Temel Bulgular & Veri:For this purpose, a 1-D simulation program was written to solve the semiconductor equations.
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Sonuç & Katkı:The transient response for voltage and current was determined.
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Reverse recovery · pin diode · semiconductor devices

Özet

In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.

Abstract

In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined.

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Bu Makaleye Atıf Yap

KESERLİOĞLU, M. S., ERKAYA, H. H. (2011). Simulation of storage time versus reverse bias current for p+n and pin diodes. Turkish Journal of Electrical Engineering and Computer Science, Cilt: 19 - Sayı: 1, 87–96. https://ajindex.com/articles/188887

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