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Dergiler / Selçuk Üniversitesi Fen Fakültesi Fen Dergisi / 2021 / Volume: 47 Issue: 2

Organik Yariiletken Tetrasiyaokuinodimetan Tabanlı Heteroyapıların Optoelektronik Özelliklerinin Araştırılması

Investigation of Optoelectronic Properties of Organic Semiconductor Tetracyaoquinodimethane Based Heterostructures

Burcu Avcı(SELÇUK ÜNİVERSİTESİ, FEN FAKÜLTESİ)0000-0003-4455-5684
Ali Akbar Hussaını(SELÇUK ÜNİVERSİTESİ)0000-0002-7128-9994
Mehmet Okan Erdal(NECMETTİN ERBAKAN ÜNİVERSİTESİ)0000-0003-4469-3438
Murat Yıldırım(SELCUK UNIVERSITY)0000-0002-4541-3752
Sayfa
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Yayın Tarihi
2021-10-30
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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

Bu malzemeler amaca göre değişiklik göstermektedir.

📌 3 Maddede Bu Makale

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Amaç & Hipotez:Son yıllarda bilim insanları metal-yarıiletken heteroeklemlerinin dayanıklılığını arttırmak maksadıyla metal ile yarıiletken arasına metal oksit, yalıtkan veya da polimer tabakalar eklemektedirler.
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Temel Bulgular & Veri:Bu çalışma kapsamında, fotodiyot uygulamaları için metal ve yarı iletken arasında ara yüzey olarak grafen nanoribbon (GNR) ve 7,7,8,8 Tetrasiyaokuinodimetan-(Tetracyanoquinodimethane TCNQ, C12H4N4) katmanı kullanılmıştır.
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Sonuç & Katkı:Bu malzemeler amaca göre değişiklik göstermektedir.
🔬Tür:Research Article
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Al/p-Si/TCNQ:GNR/Al · Heterostructure · Optoelectronic

Özet

Son yıllarda bilim insanları metal-yarıiletken heteroeklemlerinin dayanıklılığını arttırmak maksadıyla metal ile yarıiletken arasına metal oksit, yalıtkan veya da polimer tabakalar eklemektedirler. Bu malzemeler amaca göre değişiklik göstermektedir. Bu çalışma kapsamında, fotodiyot uygulamaları için metal ve yarı iletken arasında ara yüzey olarak grafen nanoribbon (GNR) ve 7,7,8,8 Tetrasiyaokuinodimetan-(Tetracyanoquinodimethane TCNQ, C12H4N4) katmanı kullanılmıştır. TCNQ katmanı, cihazın arayüzünde daha fazla elektron toplar ve çıkarır ve organik güneş pillerinde elektron alıcı malzeme olarak kullanılır. Daha sonra fiziksel buhar biriktirme yöntemiyle Al/p-Si/Al, Al/p-Si/TCNQ/Al ve Al/p-Si/TCNQ:GNR/Al heteroeklemleri elde edilmiştir. Elektriksel karakterizasyon kapsamında Akım-voltaj ölçümleri hem karanlık ortamda hemde farklı aydınlatma değerlerinde gerçekleştirilmiştir. Akım-voltaj karakteristiklerinden, idealite faktörü, bariyer yüksekliği, seri direnç ve yükselme zamanı gibi elektronik parametreler hesaplanmıştır. Sonuç olarak, TCNQ ve TCNQ:GNR katmanlarının kalite üzerinde büyük bir etkisi olduğu ve optoelektronik uygulamalar için oldukça uygun malzemeler olarak kabul edilebilebilir.

Abstract

Recently, interfacial layer such as metal oxide, insulator and polymer have been used by scientists between the metal and semiconductor to increase the stability of the metal-semiconductor heterojunctions. These materials have been varied according to their usage aims. In this study, graphene nanoribbons (GNR) and 7,7,8,8 Tetracyanoquinodimethane (TCNQ, C12H4N4) layer has been used as interfacial layer between the metal and semiconductor for photodiode applications. The TCNQ layer collects and extracts more electrons in the interface of the device and is used as electron acceptor material for organic solar cells. Herein, we fabricated Al/p-Si/Al, Al/p-Si/TCNQ/Al and Al/p-Si/TCNQ:GNR/Al heterojunctions by physical vapor deposition technique. I-V measurements has been employed under dark and various light illumination conditions to show dielectric properties of the fabricated heterojunctions. From current-voltage characteristics, we calculated the electronic parameters such as ideality factor, barrier heights, series resistances and rise times. It can be concluded from overall results that TCNQ and TCNQ:GNR layers had a major impact on quality and can be considered as quite proper materials for optoelectronic applications.

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Bu Makaleye Atıf Yap

Avcı, B., Hussaını, A. A., Erdal, M. O., Yıldırım, M. (2021). Organik Yariiletken Tetrasiyaokuinodimetan Tabanlı Heteroyapıların Optoelektronik Özelliklerinin Araştırılması. Selçuk Üniversitesi Fen Fakültesi Fen Dergisi, Volume: 47 Issue: 2. https://doi.org/10.35238/sufefd.999508

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