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Dergiler / Gazi University Journal of Science Part A: Engineering and Innovation / 2026 / Volume: 11 Issue: 1

On the Voltage Dependent Series Resistance, Interface Traps, and Conduction Mechanisms in the Al/(Ti-doped DLC)/p-Si/Au Schottky Barrier Diodes (SBDs)

Sabreen Hameed(GAZİ ÜNİVERSİTESİ)0009-0002-1696-8705
Öznur Berkün(ZONGULDAK BÜLENT ECEVİT ÜNİVERSİTESİ)0000-0002-5854-9157
Seçkin Altındal Yerişkin(GAZİ ÜNİVERSİTESİ)0000-0002-9772-1212
Sayfa
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Yayın Tarihi
2024-03-28
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⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

All results are indicated that almost all electrical parameters and conduction mechanism are quite depending on Rs, Nss, and calculation method due the voltage dependent of them.

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Amaç & Hipotez:In this study, Al-(Ti:DLC)-pSi/Au Schottky barrier diode (SBD) was manufactured instead of conventional metal / semiconductor (MS) with and without an interlayer and then several fundamental electrical-characteristics such as ideality factor (n), barrier height B series and shunt resistances (Rs, Rsh), concentration of acceptor atoms (NA), and width of depletion-layer (Wd) were derived from the forward-reverse bias current/voltage (I-V), capacitance and conductance as a function of voltage (C/G-V) data using various calculation-methods.
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Temel Bulgular & Veri:Three linear regions can be seen on the double-logarithmic IF-VF plot. with different slopes (1.28, 3.14, and 1.79) in regions with low, middle, and high forward bias, which are indicated that Ohmic-mechanism, trap-charge-limited-current (TCLC) mechanism, and space-charge-limited-current (SCLC) mechanism, respectively.
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Sonuç & Katkı:All results are indicated that almost all electrical parameters and conduction mechanism are quite depending on Rs, Nss, and calculation method due the voltage dependent of them.
🔬Tür:Research Article
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:(Ti:DLC) Interlayer Al/(Ti:DLC)/p-Si Schottky Diodes · Origin of Series Resistance and Interface States · Conduction Mechanisms

Abstract

In this study, Al-(Ti:DLC)-pSi/Au Schottky barrier diode (SBD) was manufactured instead of conventional metal / semiconductor (MS) with and without an interlayer and then several fundamental electrical-characteristics such as ideality factor (n), barrier height B series and shunt resistances (Rs, Rsh), concentration of acceptor atoms (NA), and width of depletion-layer (Wd) were derived from the forward-reverse bias current/voltage (I-V), capacitance and conductance as a function of voltage (C/G-V) data using various calculation-methods. Semi logarithmic IF-VF plot shows a linear behavior at lower-voltages and then departed from linearity as a result of the influence of series resistance/Rs and organic-interlayer. Three linear regions can be seen on the double-logarithmic IF-VF plot. with different slopes (1.28, 3.14, and 1.79) in regions with low, middle, and high forward bias, which are indicated that Ohmic-mechanism, trap-charge-limited-current (TCLC) mechanism, and space-charge-limited-current (SCLC) mechanism, respectively. Energy dependent surface states (Nss) vs (Ess-Ev) profile was also obtained from the Card-Rhoderick method by considering voltage-dependence of n and B and they were grown from the mid-gap energy up to the semiconductor's valance band (Ev). To see the impact of Rs for 1 MHz, the measured C/G-V graphs were amendment. All results are indicated that almost all electrical parameters and conduction mechanism are quite depending on Rs, Nss, and calculation method due the voltage dependent of them.

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Bu Makaleye Atıf Yap

Hameed, S., Berkün, Ö., Yerişkin, S. A. (2024). On the Voltage Dependent Series Resistance, Interface Traps, and Conduction Mechanisms in the Al/(Ti-doped DLC)/p-Si/Au Schottky Barrier Diodes (SBDs). Gazi University Journal of Science Part A: Engineering and Innovation, Volume: 11 Issue: 1. https://doi.org/10.54287/gujsa.1405552

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Kaynakça (14)

  1. Berkün, Ö., Ulusoy, M., Altındal, Ş., & Avar, B. (2023). On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti:DLC) interlayer. Physica B: Condensed Matter, 666, 415099. https://doi.org/ 10.1016/j.physb.2023.415099
  2. Card, H. C., & Rhoderick, E. H. (1971). Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4(10), 1589-1601. https://doi.org/ 10.1088/0022-3727/4/10/319/meta
  3. Cheung, S. K., & Cheung, N.W. (1986). Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied physics letters, 49(2), 85–87. http://dx.doi.org/10.1063/1.97359
  4. Demirezen, S., Altındal, Ş., Kalandaragh Y. A, & Akbaş, A. M. (2022). A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects. Physica Scripta, 97(5), 055811. https://doi.org/ 10.1088/1402-4896/ac645f
  5. Dogan, H. (2022). Parameter estimation of aı/p-si schottky barrier diode using different meta-heuristic optimization techniques. Symmetry, 14(11), 2389. https://doi.org/ 10.3390/sym14112389
  6. Güçlü, Ç. Ş. (2023). A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics. Gazi University Journal of Science Part A: Engineering and Innovation, 10, 62-69. https://doi.org/ 10.54287/gujsa.1212696
  7. Lin, Y., Weng, C., Lin, Y., Shiesh, C., & Chen, F. (2013). Effect of C content and calcination temperature on the photocatalytic activity of C doped TiO2 catalyst. Separation and Purification Technology, 116, 114 –123. https://doi.org/10.1016/j.seppur.2013.05.018
  8. Nicolian, E. H., & Brews, J. R. (1982). Metal oxide semiconductor MOS physics and technology. A Wiley Interscience Publication, 495-502.‏
  9. Reddy, N. N. K., Vattikuti, S. V. P., Verma, V. K., Singh, V. R., Alhammadi, S., Kummara,V.K., Manjunath, V., Dhanalakshmi, M., & Reddy,V. R. M. (2022). Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN. Materials Science in Semiconductor Processing, 138, 106297. https://doi.org/10.1016/j.mssp.2021.106297
  10. Sharma. M., & Tripathi, S. K. (2013). Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures. Applied Physics A, 113, 491-499. https://doi.org/10.1007/s00339-013-7552-3
  11. Sze, S. M., & Ng, K. K. (2006). Physics of Semiconductor Devices. New York, John Wiley & Sons, Inc.
  12. Ulusoy, M., Badali,Y., Pirgholi Givi, G., Azizian Kalandaragh,Y., & Altındal, Ş. (2023). The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface. Synthetic Metals, 292, 11343. https://doi.org/ 10.1016/j.synthmet.2022.117243
  13. Yerişkin, S. A., Balbaşı, M., & Orak, İ. (2017). The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. Journal of Materials Science: Materials in Electronics, 28, 14040–14048. https://doi.org/ 10.1007/s10854-017-7255-1
  14. Zeyrek, S. (2015).The effect of interface states and series resistance on current-voltage characteristics in (MIS) Schottky Diodes. Afyon Kocatepe University Journal of Science & Engineering, 15(2), 021101, 1-9. https://doi.org/ 10.5578/fmbd.9657