KaydedilenlerDerginizi ekleyin

Dergiler / Balkan Journal of Electrical and Computer Engineering / 2026 / Cilt: 7 Sayı: 1

A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Fatih Gül(Recep Tayyip Erdogan University)0000-0001-5072-2122
Sayfa
15–19
Yayın Tarihi
2019-01-31
🏛️Bu makalenin bibliyografik verileri ve tam metin bağlantısı DergiPark üzerinden sağlanmıştır.
DergiPark Kaydı ↗
✨

Yapay Zeka Hızlı Bakış & Çıkarımlar

AI Insight
⚡ TL;DR(1 Cümlede Hızlı Çıkarım)

The best fit characteristics were acquired using the Zha and Strukov models.

📌 3 Maddede Bu Makale

🎯
Amaç & Hipotez:Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications.
📊
Temel Bulgular & Veri:The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem.
💡
Sonuç & Katkı:The best fit characteristics were acquired using the Zha and Strukov models.
🔬Tür:Modelleme & Sayısal Simülasyon
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Memristor · 1D1R · Resistive random access memory (RRAM)

Abstract

Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications. The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures. A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics. The best fit characteristics were acquired using the Zha and Strukov models.

🔖

Bu Makaleye Atıf Yap

Gül, F. (2019). A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices. Balkan Journal of Electrical and Computer Engineering, Cilt: 7 Sayı: 1, 15–19. https://doi.org/10.17694/bajece.457395

📄 Tam Metin PDF Okuyucu

📄

PDF görüntüleyici hazırlanıyor...

Kaynakça (30)

  1. M. A. Zidan, H. A. H. Fahmy, M. M. Hussain, and K. N. Salama, "Memristor-based memory: The sneak paths problem and solutions," Microelectronics J., vol. 44, no. 2, pp. 176-183, Feb. 2013.
  2. A. Chen, "Memory Select Devices," in Emerging Nanoelectronic Devices, Chichester, United Kingdom: John Wiley & Sons Ltd, 2014, pp. 227-245.
  3. C. Xu, D. Niu, N. Muralimanohar, R. Balasubramonian, T. Zhang, S. Yu, and Y. Xie, "Overcoming the challenges of crossbar resistive memory architectures," in 2015 IEEE 21st International Symposium on High Performance Computer Architecture, HPCA 2015, 2015, pp. 476-488.
  4. F.Gül and Y.Babacan, "A Circuit Model for Single Cell 1 Diode-1 Memristor (1D1M) Semiconductor Device," in II. International Academic Research Congress, 2017, p. 548.C.
  5. D. B., Strukov, G. S., Snider, D. R. Stewart, and R. S., Williams, "The missing memristor found", Nature, vol.453, pp.80-83, 2008.
  6. L.O., Chua, "Memristor - the missing circuit element," IEEE Trans. Circuit Theory, vol.18, pp. 507-519, 1971.
  7. F. Gul and H. Efeoglu, "Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor," Superlattices Microstruct., vol. 101, pp. 172-179, Jan. 2017.
  8. Z. Biolek, D. Biolek, and V. Biolková, "SPICE model of memristor with nonlinear dopant drift," Radioengineering, vol. 18, no. 2, pp. 210-214, 2009.
  9. Y. N. Joglekar and S. J. Wolf, "The elusive memristor: Properties of basic electrical circuits," Eur. J. Phys., vol. 30, no. 4, pp. 661-675, 2009.
  10. T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, "A versatile memristor model with nonlinear dopant kinetics," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3099-3105, 2011.
  11. J. Zha, H. Huang, and Y. Liu, "A Novel Window Function for Memristor Model with Application in Programming Analog Circuits," IEEE Trans. Circuits Syst. II Express Briefs, vol. 63, no. 5, pp. 423-427, 2016.
  12. Y. Babacan and F. Kacar, "FCS Based Memristor Emulator with Associative Learning Circuit Application," Istanbul Univ. - J. Electr. Electron. Eng., vol. 17, no. 2, pp. 3433-3437, 2017.
  13. A. F. Adzmi, A. Nasrudin, W. F. H. Abdullah, and S. H. Herman, "Memristor Spice model for designing analog circuit," 2012 IEEE Student Conf. Res. Dev., pp. 78-83, 2012.
  14. D. Batas and H. Fiedler, "A memristor SPICE implementation and a new approach for magnetic flux-controlled memristor modeling," IEEE Trans. Nanotechnol., vol. 10, no. 2, pp. 250-255, 2011.
  15. S. Ç. Yener, R. Mutlu, and H. H. Kuntman, "Analysis of filter characteristics based on PWL Memristor," Istanbul Univ. - J. Electr. Electron. Eng., vol. 14, no. 1, pp. 1709-1719, 2014.
  16. U. E. Ayten, S. Minaei, and M. Sağbaş, "Memristor emulator circuits using single CBTA," AEU - Int. J. Electron. Commun., vol. 82, pp. 109-118, 2017.
  17. R. Mutlu and E. Karakulak, "Emulator circuit of TiO2 memristor with linear dopant drift made using analog multiplier," in National Conference on Electrical, Electronics and Computer Engineering (ELECO), 2012, pp. 380-384.
  18. H. Sözen and U. Çam, "Electronically tunable memristor emulator circuit," Analog Integr. Circuits Signal Process., vol. 89, no. 3, pp. 655-663, 2016.
  19. H. Sozen and U. Cam, "First-Order Memristor-Capacitor Filter Circuits Employing Hp Memristor," J. Circuits, Syst. Comput., vol. 23, no. 8, p. 1450116, 2014.
  20. C. P. Uzunoglu, Y. Babacan, F. Kacar, and M. Ugur, "Modeling and Suppression of Chaotic Ferroresonance in a Power System by Using Memristor-based System," Electr. Power Components Syst., vol. 44, no. 6, pp. 638-645, 2016.
  21. Y. Babacan, A. Yesil, and F. Kacar, "Memristor emulator with tunable characteristic and its experimental results," AEU - Int. J. Electron. Commun., vol. 81, pp. 99-104, 2017.
  22. Y. Babacan and F. Kaçar, "Floating memristor emulator with subthreshold region," Analog Integr. Circuits Signal Process., vol. 90, no. 2, pp. 471-475, 2017.
  23. Y. Babacan and F. Kaçar, "Memristor emulator with spike-timing-dependent-plasticity," AEU - Int. J. Electron. Commun., vol. 73, pp. 16-22, 2017.
  24. A. Yeşil, Y. Babacan, and F. Kaçar, "A new DDCC based memristor emulator circuit and its applications," Microelectronics J., vol. 45, no. 3, pp. 282-287, 2014.
  25. C. Sanchez-Lopez, M.A. Carrasco-Aguilar, and C. Muniz-Montero, "A 16 Hz-160 kHz memristor emulator circuit," AEU-International Journal of Electronics and Communications, 1208-1219, 2015.
  26. F. Gul and Y. Babacan, "A novel OTA-based circuit model corroborated by an experimental semiconductor memristor," Microelectron. Eng., vol. 194, pp. 56-60, Jul. 2018.
  27. Y. Babacan, A. Yesil, and F. Gul, "The Fabrication and MOSFET-Only Circuit Implementation of Semiconductor Memristor," IEEE Trans. Electron Devices, 2018.
  28. F. Gul and H. Efeoglu, "ZnO and ZnO1?xbased thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior," Ceram. Int., vol. 43, no. 14, pp. 10770-10775, 2017.
  29. F. Gul, "Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO 2 memristor," Ceram. Int., Mar. 2018.
  30. Z. Kolka, D. Biolek, and V. Biolkova, "Hybrid modelling and emulation of mem-systems," Int. J. Numer Model Electronic Netw. Dev. Fields, pp. 216-225, 2012.