Dergiler / Electrica / 2006 / Cilt: 6 Sayı: 2

PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS

Sayfa
251–255
Yayın Tarihi
2012-01-02
DOI
—
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PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS

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Amaç & Hipotez:PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS
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Temel Bulgular & Veri:PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS
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Sonuç & Katkı:PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS
🔬Tür:Araştırma Makalesi
📍Kapsam:Genişletilmiş Akademik Örneklem
⚙️Değişkenler:Multi-junction · concentrator and efficiency

Abstract

PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS

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Bu Makaleye Atıf Yap

ISLAM, M. R., KABIR, A. N. M. E., BHUIYAN, A. G. (2012). PROJECTED PERFORMANCE OF InXGa1-X N-BASED MULTI-JUNCTION SOLAR CELLS. Electrica, Cilt: 6 Sayı: 2, 251–255. https://ajindex.com/articles/1017767

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Kaynakça (8)

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  5. S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
  6. X. Guo, E.F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90 (8) 4191-4195,
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  8. M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, “Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE,” Phys. stat. sol. (b) 234, No., 750-754, October, 2002. M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley- interscience Publication, John wiley & sons, Inc, http://rredc.nrel.gov/solar/spectra/am1.5/ on /05/06 O. Ambacher et. al. “Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure” J. Phys. Condens Matter 14, 3399-, 2002. M. Yamaguichi et al., “Japanese activities of R&Don III-V concentrator solar cells and modules”, proc. 19th EU-PVSEC, 2004